US 11,767,611 B2
Methods for producing a monocrystalline ingot by horizontal magnetic field Czochralski
JaeWoo Ryu, Chesterfield, MO (US); Carissima Marie Hudson, St. Charles, MO (US); JunHwan Ji, Cheonan-si (KR); and WooJin Yoon, Cheonan-Si (KR)
Assigned to GlobalWafers Co., Ltd., Hsinchu (TW)
Filed by GlobalWafers Co., Ltd., Hsinchu (TW)
Filed on May 25, 2021, as Appl. No. 17/330,092.
Claims priority of provisional application 63/056,056, filed on Jul. 24, 2020.
Prior Publication US 2022/0025541 A1, Jan. 27, 2022
Int. Cl. C30B 15/20 (2006.01); C30B 15/10 (2006.01); C30B 15/30 (2006.01); C30B 29/06 (2006.01)
CPC C30B 15/20 (2013.01) [C30B 15/10 (2013.01); C30B 15/30 (2013.01); C30B 29/06 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method for producing a monocrystalline silicon ingot having a neck and a main body suspended from the neck by the horizontal magnetic field Czochralski method, the monocrystalline silicon ingot being grown in an ingot puller apparatus having a heat shield, the method comprising:
contacting a seed crystal with a silicon melt held within a crucible;
pulling a neck from the silicon melt, wherein:
a horizontal magnetic field is not applied to the melt while the neck is pulled from the melt;
the crucible is rotated at a crucible rotation rate of 8 rpm or more while pulling the neck from the melt; and
a distance between the melt and a bottom of the heat shield is at least 60 mm while pulling the neck from the melt; and
pulling an ingot main body from the melt, the main body being suspended from the neck, wherein a horizontal magnetic field is applied to the melt while the ingot main body is pulled from the melt.