CPC C30B 15/20 (2013.01) [C30B 15/10 (2013.01); C30B 15/30 (2013.01); C30B 29/06 (2013.01)] | 17 Claims |
1. A method for producing a monocrystalline silicon ingot having a neck and a main body suspended from the neck by the horizontal magnetic field Czochralski method, the monocrystalline silicon ingot being grown in an ingot puller apparatus having a heat shield, the method comprising:
contacting a seed crystal with a silicon melt held within a crucible;
pulling a neck from the silicon melt, wherein:
a horizontal magnetic field is not applied to the melt while the neck is pulled from the melt;
the crucible is rotated at a crucible rotation rate of 8 rpm or more while pulling the neck from the melt; and
a distance between the melt and a bottom of the heat shield is at least 60 mm while pulling the neck from the melt; and
pulling an ingot main body from the melt, the main body being suspended from the neck, wherein a horizontal magnetic field is applied to the melt while the ingot main body is pulled from the melt.
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