CPC B24B 37/042 (2013.01) [B24B 37/20 (2013.01)] | 20 Claims |
1. A chemical mechanical polishing (CMP) apparatus comprising:
a polishing pad located on a top surface of a platen configured to rotate around a vertical axis passing through the platen;
a wafer carrier configured to hold a substrate on a bottom surface thereof and to press the substrate on a top surface of the polishing pad;
a slurry dispenser configured to dispense slurry over the top surface of the polishing pad; and
a pad conditioning unit comprising a pad conditioning disk and a conditioning head configured to hold the pad conditioning disk, wherein the conditioning head comprises an electromagnet and the pad conditioning disk comprises a first ferromagnetic material portion configured to be attracted to the electromagnet when the electromagnet is energized, wherein the conditioning head comprises a cylindrical cavity that contains an outer screw thread on an inner sidewall thereof, wherein the pad conditioning disk comprise an inner screw thread as an outermost laterally protruding structure of the pad conditioning disk, and wherein the inner screw thread is configured to fit the outer screw thread.
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