US 12,426,521 B2
Selector device comprising polycrystalline metal oxide layer and cross-point memory comprising same
Jin Pyo Hong, Seoul (KR); and Gabriel Jang, Seoul (KR)
Assigned to Industry-University Cooperation Foundation Hanyang University, Seoul (KR)
Appl. No. 17/426,033
Filed by Industry-University Cooperation Foundation Hanyang University, Seoul (KR)
PCT Filed Jan. 29, 2020, PCT No. PCT/KR2020/001330
§ 371(c)(1), (2) Date Jul. 27, 2021,
PCT Pub. No. WO2020/159214, PCT Pub. Date Aug. 6, 2020.
Claims priority of application No. 10-2019-0010998 (KR), filed on Jan. 29, 2019; and application No. 10-2020-0010122 (KR), filed on Jan. 28, 2020.
Prior Publication US 2022/0165950 A1, May 26, 2022
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01)
CPC H10N 70/8833 (2023.02) [H10B 63/80 (2023.02); H10N 70/841 (2023.02); H10N 70/8613 (2023.02)] 1 Claim
OG exemplary drawing
 
1. A method for manufacturing a selection device comprising:
sequentially forming a metal layer, a diffusion control layer, and a metal oxide layer on a substrate, wherein the metal layer is a layer of the same metal as a metal included in the metal oxide layer and the diffusion control layer is an inert metal layer or a metal compound layer which is inert;
heat-treating the substrate on which the metal oxide layer is formed in an inert gas atmosphere to crystallize the metal oxide layer to obtain a polycrystalline layer having a plurality of crystal grains and a grain boundary therebetween, and to diffuse the metal in the metal layer through the diffusion control layer into to the grain boundary thereby forming a conductive nanochannel; and
forming an upper electrode on the heat-treated metal oxide layer,
wherein the crystal grains are crystal grains of Ta2O5 and the metal layer under the diffusion control layer is a Ta layer; or wherein the crystal grains are crystal grains of HfO2 and the metal layer under the diffusion control layer is a Hf layer.