US 12,426,518 B2
Conductive oxide diffusion barrier for laser crystallization
Ning Li, White Plains, NY (US); Fabio Carta, Pleasantville, NY (US); Devendra K. Sadana, Pleasantville, NY (US); and Tze-Chiang Chen, Yorktown Heights, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Dec. 17, 2019, as Appl. No. 16/718,077.
Prior Publication US 2021/0184113 A1, Jun. 17, 2021
Int. Cl. H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/235 (2023.02) [H10B 63/20 (2023.02); H10N 70/011 (2023.02); H10N 70/841 (2023.02)] 16 Claims
OG exemplary drawing
 
1. A memory cell, comprising:
a substrate;
a first electrode layer on top of the substrate;
a conductive oxide diffusion barrier layer on top of the first electrode, wherein the conductive oxide diffusion barrier comprises gallium (Ga) doped zinc oxide (ZnO) and is configured to prevent a diffusion of the first electrode layer into a polycrystalline silicon diode on top of the conductive oxide diffusion barrier, wherein the polycrystalline silicon diode is laser annealed; and
a phase change material (PCM) layer on top of the polycrystalline silicon diode; and
a second electrode on top of the PCM layer.