US 12,426,517 B2
Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same
Yu-Der Chih, Hsinchu (TW); Wen-Zhang Lin, Hsinchu (TW); Yun-Sheng Chen, Hsinchu (TW); Jonathan Tsung-Yung Chang, Hsinchu (TW); Chrong-Jung Lin, Hsinchu (TW); Ya-Chin King, Hsinchu (TW); Cheng-Jun Lin, Hsinchu (TW); and Wang-Yi Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 6, 2024, as Appl. No. 18/735,715.
Application 18/735,715 is a continuation of application No. 17/581,153, filed on Jan. 21, 2022, granted, now 12,041,860.
Prior Publication US 2024/0324474 A1, Sep. 26, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 70/00 (2023.01); H10B 63/00 (2023.01)
CPC H10N 70/021 (2023.02) [H10B 63/80 (2023.02); H10N 70/063 (2023.02); H10N 70/066 (2023.02); H10N 70/068 (2023.02); H10N 70/841 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A resistive memory device comprising:
a bottom electrode;
a top electrode disposed above the bottom electrode, and having a downward protrusion; and
a resistance changing element covering side and bottom surfaces of the downward protrusion.