| CPC H10K 71/20 (2023.02) [H10D 86/0212 (2025.01); H10K 59/131 (2023.02); H10K 71/00 (2023.02); H10K 71/40 (2023.02); H10K 85/50 (2023.02); H10K 59/1201 (2023.02)] | 13 Claims |

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1. A method for manufacturing an array substrate, comprising:
forming a patterned film layer on a side of a substrate, wherein the patterned film layer is provided with a plurality of grooves;
forming a first precursor structure in the groove, wherein a material of the first precursor structure comprises a first precursor; and
disposing, in an environment of a gaseous second precursor, the substrate on which the first precursor structure is formed, such that the gaseous second precursor is reacted with the first precursor structure to form a perovskite crystal structure;
wherein one of the first precursor and the gaseous second precursor comprises a metal halide, and the other of the first precursor and the gaseous second precursor comprises one of a formamidine halide, a methyl-amine halide, a cesium halide, and a hydrogen sulfide,
wherein forming the first precursor structure in the groove comprises:
coating a first precursor solution having a first concentration to the side of the substrate on which the patterned film layer is formed;
acquiring a first precursor seed nucleus by precipitating a solute of the first precursor solution having the first concentration in the groove; and
disposing, in a first precursor solution having a second concentration, the substrate on which the first precursor seed nucleus is formed, such that the first precursor seed nucleus grows up to form the first precursor structure;
wherein the second concentration is greater than the first concentration.
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