US 12,426,468 B2
Organic light emitting diode device
Mi-Seong Kim, Paju-si (KR); Se-Jong Yoo, Paju-si (KR); and Kyoung-Mook Lee, Paju-si (KR)
Assigned to LG Display Co., Ltd., Seoul (KR)
Filed by LG Display Co., Ltd., Seoul (KR)
Filed on Feb. 23, 2022, as Appl. No. 17/679,061.
Application 17/679,061 is a division of application No. 16/578,695, filed on Sep. 23, 2019, granted, now 11,296,156.
Claims priority of application No. 10-2018-0149489 (KR), filed on Nov. 28, 2018; application No. 10-2018-0154485 (KR), filed on Dec. 4, 2018; and application No. 10-2018-0172125 (KR), filed on Dec. 28, 2018.
Prior Publication US 2022/0190046 A1, Jun. 16, 2022
Int. Cl. H01L 35/24 (2006.01); H01L 27/32 (2006.01); H01L 51/00 (2006.01); H01L 51/52 (2006.01); H10K 50/805 (2023.01); H10K 59/121 (2023.01); H10K 59/122 (2023.01); H10K 59/35 (2023.01); H10K 59/40 (2023.01); H10K 59/80 (2023.01); H10K 102/00 (2023.01); H10K 102/10 (2023.01)
CPC H10K 59/35 (2023.02) [H10K 50/805 (2023.02); H10K 59/1213 (2023.02); H10K 59/122 (2023.02); H10K 59/40 (2023.02); H10K 59/8723 (2023.02); H10K 59/8731 (2023.02); H10K 59/805 (2023.02); H10K 2102/103 (2023.02); H10K 2102/311 (2023.02)] 26 Claims
OG exemplary drawing
 
1. An organic light emitting diode (OLED) device, comprising:
a flexible substrate including a plurality of sub-pixels;
a thin film transistor (TFT) in each of the plurality of sub-pixels, wherein the TFT includes a source electrode and a drain electrode;
a passivation layer on the TFT;
a planarization layer on the passivation layer;
an organic light emitting diode on the planarization layer and including a first electrode, an organic light emitting layer and a second electrode;
a bank on the planarization layer and disposed at a boundary region of the sub-pixel;
a metal layer between the passivation layer and the flexible substrate and overlapping at least a portion of the first electrode and at least a portion of the bank, wherein the metal layer is disposed at the same layer as the source electrode and the drain electrode;
an encapsulation layer on an organic light emitting diode, wherein the encapsulation layer includes at least one organic encapsulation layer and at least one inorganic encapsulation layer; and
a touch electrode on the encapsulation layer overlapping at least a portion of the bank,
wherein the first electrode is directly connected to the drain electrode and overlaps at least a portion of the metal layer.
 
18. An organic light emitting diode (OLED) device, comprising:
a flexible substrate;
a thin film transistor (TFT) on the flexible substrate including a semiconductor layer, a gate electrode, a source electrode and a drain electrode;
a passivation layer covering the TFT;
a planarization layer on the passivation layer;
an organic light emitting diode on the planarization layer and including a first electrode, an organic light emitting layer and a second electrode;
a bank on the planarization layer and surrounding the organic light emitting diode; and
an encapsulation layer on the organic light emitting diode,
wherein an encapsulation hole is in the encapsulation layer to expose a part of the passivation layer,
wherein a touch electrode is on the exposed part of the passivation layer and extends from the drain electrode,
wherein the TFT has at least one inorganic layer,
wherein an opening is disposed to expose the inorganic layer of the TFT,
wherein the opening defines at least one area in a bending region for reducing stress caused by bending the OLED device, and
wherein the encapsulation layer includes at least one organic encapsulation layer and at least one inorganic encapsulation layer.