US 12,426,438 B2
Quantum dots light emitting diode, display apparatus, and method of fabricating quantum dots light emitting diode
Aidi Zhang, Beijing (CN)
Assigned to Beijing BOE Technology Development Co., Ltd., Beijing (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
Appl. No. 16/975,115
Filed by Beijing BOE Technology Development Co., Ltd., Beijing (CN); and BOE Technology Group Co., Ltd., Beijing (CN)
PCT Filed Nov. 14, 2019, PCT No. PCT/CN2019/118485
§ 371(c)(1), (2) Date Aug. 21, 2020,
PCT Pub. No. WO2021/092850, PCT Pub. Date May 20, 2021.
Prior Publication US 2023/0157049 A1, May 18, 2023
Int. Cl. H10K 50/16 (2023.01); C09K 11/56 (2006.01); H10K 50/115 (2023.01); H10K 71/40 (2023.01); H10K 101/00 (2023.01)
CPC H10K 50/16 (2023.02) [C09K 11/565 (2013.01); H10K 50/115 (2023.02); H10K 71/40 (2023.02); H10K 2101/80 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A quantum dots light emitting diode, comprising:
a first electrode layer;
an electron transport layer on the first electrode layer;
a quantum dots layer on a side of the electron transport layer away from the first electrode layer; and
an interface non-oxide chalcogen-containing compound at an interface between the electron transport layer and the quantum dots layer;
wherein the electron transport layer comprises an electron transport non-oxide chalcogen-containing material;
the electron transport non-oxide chalcogen-containing material comprising a non- oxide chalcogen;
the interface non-oxide chalcogen-containing compound comprises a metal element from the quantum dots layer and the non-oxide chalcogen from the electron transport layer;
the non-oxide chalcogen is selected from a group consisting of sulfide ion, selenium ion, and tellurium ion;
the electron transport layer comprises a gradient alloy composite sub-layer comprising an electron transport oxide material and the electron transport non-oxide chalcogen-containing material; and
the electron transport non-oxide chalcogen-containing material has a gradient distribution such that a content of the electron transport non-oxide chalcogen-containing material decreases along a direction from the quantum dots layer to the first electrode layer.