US 12,426,424 B2
Light-emitting device and method for making the same
Lixun Yang, Xiamen (CN); Jianfeng Yang, Xiamen (CN); Kuowei Ho, Xiamen (CN); Linrong Cai, Xiamen (CN); Xiaoqiang Zeng, Xiamen (CN); and Shaohua Huang, Xiamen (CN)
Assigned to XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen (CN)
Filed by XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Tong'an District (CN)
Filed on Nov. 10, 2021, as Appl. No. 17/454,337.
Claims priority of application No. 202011268801.8 (CN), filed on Nov. 13, 2020.
Prior Publication US 2022/0157883 A1, May 19, 2022
Int. Cl. H10H 29/14 (2025.01); G01R 31/28 (2006.01)
CPC H10H 29/14 (2025.01) [G01R 31/2884 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A light-emitting device comprising:
a substrate;
a number (N) of light-emitting units that are disposed on said substrate and that are spaced apart from each other, each of said light-emitting units having a light-emitting stack that has a first semiconductor layer, an active layer, and a second semiconductor layer which has a doping type opposite to said first semiconductor layer, and an upper surface that is a light exiting surface, the number (N) being not smaller than two;
an interconnect structure that electrically interconnects the light-emitting units and that is located underneath said first semiconductor layer of said light-emitting stack of each of said light-emitting units;
a first electrode that is electrically connected to said first semiconductor layer of a first one of said light-emitting units;
a second electrode that is electrically connected to said second semiconductor layer of an Nth one of said light-emitting units; and
an auxiliary electrode structure that is electrically connected to said interconnect structure, that includes a top surface being opposite to said substrate being exposed from said interconnect structure, and being spaced apart from said upper surface of said second semiconductor layer of each of said light-emitting units in a direction transverse to a thickness direction of said light-emitting units, and that is adapted for connection with a testing apparatus for testing said light-emitting device;
wherein the interconnect structure has a first extension portion that extends into an inside of each of said light-emitting units to electrically connect said second semiconductor layer of each of said light-emitting units and a second extension portion extends to an adjacent one of said light- emitting units;
wherein a first ohmic contact structure is interposed between said second extension portion and said auxiliary electrode structure and a second ohmic contact structure is interposed between said second extension portion and said first semiconductor layer of said adjacent one of said light-emitting units to provide electrical connections.