US 12,426,420 B2
Light-emitting diode element and method for manufacturing display apparatus
Shih-Hsiung Lin, Hsinchu (TW); and Yang-En Wu, Hsinchu (TW)
Assigned to AUO Corporation, Hsinchu (JP)
Filed by AUO Corporation, Hsinchu (TW)
Filed on Jul. 28, 2022, as Appl. No. 17/875,448.
Claims priority of application No. 111118688 (TW), filed on May 19, 2022.
Prior Publication US 2023/0378409 A1, Nov. 23, 2023
Int. Cl. H01L 23/00 (2006.01); H10H 20/857 (2025.01); H10H 20/01 (2025.01)
CPC H10H 20/857 (2025.01) [H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/81 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/81815 (2013.01); H01L 2924/014 (2013.01); H10H 20/0364 (2025.01)] 8 Claims
OG exemplary drawing
 
1. A light-emitting diode element, comprising:
a first-type semiconductor layer;
a second-type semiconductor layer, disposed on the first-type semiconductor layer;
an active layer, disposed between the first-type semiconductor layer and the second-type semiconductor layer;
an insulating layer, disposed on a surface of the second-type semiconductor layer and covering a sidewall of the first-type semiconductor layer, a sidewall of the second-type semiconductor layer, and a sidewall of the active layer;
a first electrode and a second electrode, respectively electrically connected to the first-type semiconductor layer and the second-type semiconductor layer;
a first passivation layer, covering at least a portion of the insulating layer located on the sidewall of the first-type semiconductor layer and the sidewall of the second-type semiconductor layer, and having a first opening and a second opening respectively overlapping the first electrode and the second electrode;
a first seed layer, disposed on the first passivation layer, and having a first conductive pattern and a second conductive pattern that are structurally separated from one another, wherein the first conductive pattern and the second conductive pattern of the first seed layer are respectively electrically connected to the first electrode and the second electrode through the first opening and the second opening of the first passivation layer;
a first electroplating layer, disposed on the first seed layer, and having a first conductive pattern and a second conductive pattern that are structurally separated from one another, wherein the first conductive pattern and the second conductive pattern of the first electroplating layer are respectively disposed on the first conductive pattern and the second conductive pattern of the first seed layer and are respectively electrically connected to the first conductive pattern and the second conductive pattern of the first seed layer; and
a first solder and a second solder, respectively electrically connected to the first conductive pattern and the second conductive pattern of the first electroplating layer;
wherein the first conductive pattern of the first seed layer is smaller than the first conductive pattern of the first electroplating layer, and the second conductive pattern of the first seed layer is smaller than the second conductive pattern of the first electroplating layer;
a second passivation layer, disposed on the first electroplating layer and the first passivation layer, and having a first opening and a second opening respectively overlapping the first conductive pattern and the second conductive pattern of the first electroplating layer;
a second seed layer, disposed on the second passivation layer, and having a first conductive pattern and a second conductive pattern that are structurally separated from one another, wherein the first conductive pattern and the second conductive pattern of the second seed layer are respectively electrically connected to the first conductive pattern and the second conductive pattern of the first electroplating layer through the first opening and the second opening of the second passivation layer; and
a second electroplating layer, disposed on the second seed layer, and having a first conductive pattern and a second conductive pattern that are structurally separated from one another, wherein the first conductive pattern and the second conductive pattern of the second electroplating layer are respectively disposed on the first conductive pattern and the second conductive pattern of the second seed layer and are respectively electrically connected to the first conductive pattern and the second conductive pattern of the second seed layer;
wherein the first conductive pattern of the second seed layer is smaller than the first conductive pattern of the second electroplating layer, and the second conductive pattern of the second seed layer is smaller than the second conductive pattern of the second electroplating layer.