US 12,426,411 B2
Semiconductor device, semiconductor component and display panel including the same
Min-Hsun Hsieh, Hsinchu (TW); Yu-Tsu Lee, Hsinchu (TW); and Wei-Jen Hsueh, Hsinchu (TW)
Assigned to Epistar Corporation, Hsinchu (TW)
Filed by Epistar Corporation, Hsinchu (TW)
Filed on Dec. 26, 2023, as Appl. No. 18/396,320.
Application 18/396,320 is a continuation of application No. 17/203,293, filed on Mar. 16, 2021, granted, now 11,894,489.
Prior Publication US 2024/0186449 A1, Jun. 6, 2024
Int. Cl. H10H 20/824 (2025.01); H10H 20/01 (2025.01); H10H 20/857 (2025.01); H10H 29/14 (2025.01)
CPC H10H 20/824 (2025.01) [H10H 20/013 (2025.01); H10H 20/857 (2025.01); H10H 29/142 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor structure including a first semiconductor layer having a first material, a second semiconductor layer, an active region between the first semiconductor layer and the second semiconductor layer;
a first metal element-containing structure located on the semiconductor structure and comprising a first metal element; and
a layer having a second material and a second metal element, located between the first semiconductor layer and the first metal element-containing structure;
wherein the first material has a conduction band edge Ec and a valence band edge Ev, and the second material has a work function WF1, when the first semiconductor layer is of an n-type conductivity, the work function WF1 fulfills WF1<(Ec+Ev)/2, and when the first semiconductor layer is of a p-type conductivity, the work function WF1 fulfills WF1>(Ec+Ev)/2.