US 12,426,410 B2
Semiconductor components and semiconductor structures and methods of fabrication
Trung Tri Doan, Baoshan Township (TW); Chen-Fu Chu, Hsinchu (TW); Shih-Kai Chan, Miaoli County (TW); David Trung Doan, Baoshan Township, Hsinchu County (TW); and Yi-Feng Shih, Toufen (TW)
Assigned to TSLC Corporation, Chu-nan (TW)
Filed by TSLC CORPORATION, Chu-nan (TW)
Filed on Jul. 23, 2020, as Appl. No. 16/936,805.
Claims priority of provisional application 62/892,644, filed on Aug. 28, 2019.
Prior Publication US 2021/0066547 A1, Mar. 4, 2021
Int. Cl. H10H 20/819 (2025.01); H10H 20/01 (2025.01); H10H 20/84 (2025.01)
CPC H10H 20/819 (2025.01) [H10H 20/01 (2025.01); H10H 20/018 (2025.01); H10H 20/84 (2025.01); H10H 20/034 (2025.01)] 22 Claims
OG exemplary drawing
 
1. A semiconductor component for fabricating semiconductor structures comprising:
a plate having an elastomeric polymer layer thereon; and
a semiconductor structure on the plate, the semiconductor structure comprising:
a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer;
a plurality of mesas comprising separated portions of the first semiconductor layer, the second semiconductor layer and the active layer, the mesas including a shorting mesa and a non-shorting mesa, the non-shorting mesa configured to apply a current to the active layer for generating photon/light in a first portion of the active layer of the non-shorting mesa; and
a strapping metal layer on the shorting mesa electrically connecting the second semiconductor layer to the first semiconductor layer providing a short circuit for the current and no photon/light generated by a second portion of the active layer of the shorting mesa;
wherein the shorting mesa and the non-shorting mesa have substantially a same height and are configured for engagement with the elastomeric polymer layer.