US 12,426,398 B2
Optoelectronic device with superimposed emissive and photodetector components
François Templier, Grenoble (FR); Jean-François Mainguet, Grenoble (FR); and Margaux Vigier, Grenoble (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed on Sep. 6, 2022, as Appl. No. 17/929,908.
Claims priority of application No. 21 09581 (FR), filed on Sep. 13, 2021.
Prior Publication US 2023/0081818 A1, Mar. 16, 2023
Int. Cl. H10K 59/60 (2023.01); G09G 5/10 (2006.01); H10F 55/00 (2025.01); H10F 71/00 (2025.01)
CPC H10F 55/18 (2025.01) [G09G 5/10 (2013.01); H10F 71/121 (2025.01); G09G 2360/148 (2013.01)] 12 Claims
OG exemplary drawing
 
1. An optoelectronic device comprising at least:
an emissive component including at least a first electrode, a second electrode, and an emissive element disposed between an emissive face of the optoelectronic device and the second electrode;
a photodetector component such that the second electrode of the emissive component is disposed between the photodetector component and the emissive element;
wherein:
the emissive component and the photodetector component are superimposed one above the other, and
the second electrode has at least one hole passing through it, disposed vertically in line with at least a part of a detection surface of the photodetector component and/or a part of the detection surface of the photodetector component is not disposed vertically in line with the second electrode and form a ring located at the external edges of the detection surface of the photodetector component.