US 12,426,355 B2
Integration of stacked nanosheets and FINFET that overhangs a bottom spacer
Effendi Leobandung, Stormville, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Feb. 22, 2022, as Appl. No. 17/651,903.
Prior Publication US 2023/0268345 A1, Aug. 24, 2023
Int. Cl. H10D 84/83 (2025.01); H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01)
CPC H10D 84/834 (2025.01) [H01L 21/0259 (2013.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10D 84/0128 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01)] 19 Claims
OG exemplary drawing
 
17. A method comprising:
forming alternating layers of sacrificial material and channel material located on top of a substrate, wherein a first sacrificial layer is located directly on top of the substrate;
removing the first sacrificial layer and forming a bottom spacer located directly on top of the substrate and below the alternating layers;
etching the alternating layers and the bottom spacer to a first width along a first axis;
removing the alternating layers comprised of the sacrificial material; and
epitaxially growing the layers of the alternating layers comprised of the channel material to merger the layers of the alternating layers comprised of the channel material to form a combine fin, wherein the fin has a second width along the first axis, wherein the second width is larger than the first width.