	US 12,426,332 B2
	Introducing fluorine to gate after work function metal deposition
Bo-Wen Hsieh, Miaoli County (TW); and Pei Ying Lai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on May 24, 2024, as Appl. No. 18/674,589.
Application 18/674,589 is a continuation of application No. 17/459,449, filed on Aug. 27, 2021, granted, now 11,996,453.
Prior Publication US 2024/0313068 A1, Sep. 19, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 64/01 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 64/66 (2025.01)

CPC H10D 64/01 (2025.01) [H10D 30/62 (2025.01); H10D 30/6735 (2025.01); H10D 64/667 (2025.01)]

20 Claims

1. A method, comprising:

depositing a gate dielectric over a channel;

depositing one or more work function (WF) metals over the gate dielectric ;

performing a fluorine-introduction process, wherein the fluorine-introduction process introduces a plurality of fluorine-containing particles to at least a surface of the one or more WF metals; and

providing an energy boost to the fluorine-containing particles, wherein the energy boost causes at least some of the fluorine-containing particles to penetrate into the gate dielectric.