US 12,426,331 B2
Power semiconductor device and method of producing a power semiconductor device
Damiano Cassese, Villach (AT); Andreas Korzenietz, Putzbrunn (DE); Holger Schulze, Villach (AT); and Frank Umbach, Munich (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Aug. 5, 2022, as Appl. No. 17/881,740.
Claims priority of application No. 102021121043.7 (DE), filed on Aug. 12, 2021.
Prior Publication US 2023/0048908 A1, Feb. 16, 2023
Int. Cl. H10D 64/01 (2025.01); H10D 62/10 (2025.01); H10D 64/00 (2025.01)
CPC H10D 64/01 (2025.01) [H10D 62/107 (2025.01); H10D 64/111 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A method of producing a power semiconductor device, the method comprising:
providing a semiconductor body;
forming, at the semiconductor body, a polycrystalline semiconductor region, wherein forming the polycrystalline semiconductor region includes a structuring step during which a lateral structuration of the polycrystalline semiconductor region is performed to form a laterally structured polycrystalline semiconductor region;
forming, at the polycrystalline semiconductor region, an amorphous sublayer, wherein forming the amorphous sublayer includes a damage implantation processing step, wherein the damage implantation processing step is carried out as an unmasked implantation to form a doped semiconductor region in the semiconductor body adjacent to the laterally structured polycrystalline semiconductor region;
subjecting the amorphous sublayer to a re-crystallization processing step to form a re-crystallized sublayer; and
forming a metal layer at the re-crystallized sublayer.