US 12,426,329 B2
Silicon carbide semiconductor device including a side silicide layer and method for manufacturing the same
Hiroki Tsuma, Nisshin (JP); Yuji Nagumo, Nisshin (JP); Masashi Uecha, Nisshin (JP); and Teruaki Kumazawa, Nisshin (JP)
Assigned to DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); and MIRISE Technologies Corporation, Nisshin (JP)
Filed by DENSO CORPORATION, Kariya (JP); TOYOTA JIDOSHA KABUSHIKI KAISHA, Toyota (JP); and MIRISE Technologies Corporation, Nisshin (JP)
Filed on Nov. 4, 2022, as Appl. No. 17/981,049.
Claims priority of application No. 2021-185005 (JP), filed on Nov. 12, 2021.
Prior Publication US 2023/0154987 A1, May 18, 2023
Int. Cl. H10D 62/832 (2025.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/78 (2006.01); H10D 8/01 (2025.01); H10D 8/60 (2025.01); H10D 12/01 (2025.01); H10D 30/66 (2025.01); H10D 62/10 (2025.01); H10D 62/40 (2025.01); H10D 64/23 (2025.01); H10D 64/62 (2025.01)
CPC H10D 62/8325 (2025.01) [H01L 21/02008 (2013.01); H01L 21/02447 (2013.01); H01L 21/02529 (2013.01); H01L 21/02598 (2013.01); H01L 21/78 (2013.01); H10D 8/60 (2025.01); H10D 12/031 (2025.01); H10D 62/40 (2025.01); H01L 21/0485 (2013.01); H01L 2924/00 (2013.01); H01L 2924/0002 (2013.01); H10D 8/051 (2025.01); H10D 30/665 (2025.01); H10D 62/106 (2025.01); H10D 62/405 (2025.01); H10D 64/252 (2025.01); H10D 64/62 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A silicon carbide semiconductor device comprising:
a silicon carbide semiconductor layer including a silicon carbide single crystal and having a main surface, a rear surface opposite to the main surface, and a side surface connecting the main surface and the rear surface and formed by a cleavage plane, the silicon carbide semiconductor layer further including a modified layer, the modified layer forming a part of the side surface located close to the rear surface and having an atomic arrangement structure of silicon carbide different from an atomic arrangement structure of the silicon carbide single crystal; and
a side silicide layer including a metal silicide that is a compound of a metal element and silicon, the side silicide layer disposed on the side surface of the silicon carbide semiconductor layer and covering the modified layer.