| CPC H10D 62/299 (2025.01) [H01L 21/26513 (2013.01); H10D 84/017 (2025.01); H10D 84/038 (2025.01); H10D 62/105 (2025.01)] | 12 Claims |
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1. A semiconductor structure, comprising:
an active pillar, wherein the active pillar comprises: a channel region, as well as a first doped region and a second doped region located at two sides of the channel region, the channel region, the first doped region, and the second doped region having a same doping type;
wherein a counter-doped region is arranged in the channel region, the counter-doped region is close to the first doped region, and a doping type of the counter-doped region is different from a doping type of the channel region; and
a gate, wherein the gate surrounds a part of the channel region, and in a plane in which an axis of the active pillar is located, projection of the gate partially overlaps with projection of the counter-doped region;
wherein a cross-sectional width of the channel region is greater than or equal to 30 nm;
wherein a difference between the cross-sectional width of the channel region and a cross-sectional width of the counter-doped region is 10 nm to 20 nm.
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9. A method of manufacturing a semiconductor structure, comprising:
providing a base, wherein the base comprises an active pillar, and the active pillar has a first doping type;
forming a counter-doped region, wherein the counter-doped region is located in the active pillar and is close to an end of the active pillar, and a doping type of the counter-doped region is different from a doping type of the active pillar;
forming a gate, wherein the gate surrounds partial surface of the active pillar, and in a plane in which an axis of the active pillar is located, projection of the gate partially overlaps with projection of the counter-doped region; and
performing heavy ion doping of a first doping type on two end portions of the active pillar, to form a first doped region and a second doped region;
wherein the first doped region is located at a side of the counter-doped region that is away from the gate, and the remaining active pillar between the first doped region and the second doped region is used as a channel region;
wherein a cross-sectional width of the channel region is greater than or equal to 30 nm;
wherein a difference between the cross-sectional width of the channel region and a cross-sectional width of the counter-doped region is 10 nm to 20 nm.
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