| CPC H10D 62/151 (2025.01) [H10D 84/013 (2025.01); H10D 84/038 (2025.01)] | 20 Claims |
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15. A method, comprising:
forming a source/drain region over a substrate;
flipping over the substrate;
depositing a hard mask over an isolation region;
forming a first conductive feature in the hard mask layer, wherein the first conductive feature is electrically connected to the source/drain region;
forming an opening to expose an upper portion of the first conductive feature;
depositing a first blocking layer on the exposed upper portion of the first conductive feature;
depositing a first barrier layer on the hard mask layer and the isolation region;
removing the first blocking layer;
depositing a second conductive feature in the opening;
forming a dielectric layer on the hard mask layer; and
depositing a third conductive feature on the first and second conductive features.
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