	US 12,426,322 B2
	Core-shell nanostructures for semiconductor devices
Cheng-Yi Peng, Taipei (TW); and Song-Bor Lee, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 9, 2023, as Appl. No. 18/232,272.
Application 18/232,272 is a continuation of application No. 17/582,866, filed on Jan. 24, 2022, granted, now 11,824,089.
Application 17/582,866 is a continuation of application No. 16/806,597, filed on Mar. 2, 2020, granted, now 11,233,119, issued on Jan. 25, 2022.
Prior Publication US 2023/0411455 A1, Dec. 21, 2023
Int. Cl. H10D 62/10 (2025.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 62/40 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01)

CPC H10D 62/121 (2025.01) [H10D 30/0245 (2025.01); H10D 30/6212 (2025.01); H10D 30/6735 (2025.01); H10D 30/751 (2025.01); H10D 30/791 (2025.01); H10D 62/405 (2025.01); H10D 84/0167 (2025.01); H10D 84/0184 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01)]

20 Claims

1. A method, comprising:

forming a first nanostructured layer on a substrate;

forming a second nanostructured layer on the first nanostructured layer;

etching the second nanostructured layer to form a core region comprising a first surface with a first crystal orientation;

epitaxially growing, on the core region, a shell region comprising second surface with a second crystal orientation different from the first crystal orientation; and

forming a gate structure surrounding the shell region.