US 12,426,320 B2
Vertically stacked fin semiconductor devices
Praveen Joseph, White Plains, NY (US); Tao Li, Albany, NY (US); Indira Seshadri, Niskayuna, NY (US); and Ekmini A. De Silva, Slingerlands, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Jun. 9, 2021, as Appl. No. 17/343,291.
Application 17/343,291 is a division of application No. 16/397,452, filed on Apr. 29, 2019, granted, now 11,075,266.
Prior Publication US 2021/0296438 A1, Sep. 23, 2021
Int. Cl. H10D 62/10 (2025.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01)
CPC H10D 62/115 (2025.01) [H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02225 (2013.01); H01L 21/02238 (2013.01); H01L 21/02252 (2013.01); H01L 21/02381 (2013.01); H01L 21/30604 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/7624 (2013.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 84/0188 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01)] 5 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a bottom fin formed from a first semiconductor material;
a top fin formed from the first semiconductor material;
an isolation layer formed from an oxide of the first semiconductor material, directly between the bottom fin and the top fin, including a top portion and a bottom portion each having a first horizontal thickness in a first direction, and a middle portion, between the top portion and the bottom portion, having a second horizontal thickness in the first direction that is greater than the first horizontal thickness; and
a dielectric layer over and around the top fin, the bottom fin, and the isolation layer, formed from a dielectric material different from the oxide of the first semiconductor material.