US 12,426,317 B2
Semiconductor device and manufacturing method thereof
Jenn-Gwo Hwu, Taipei (TW); Jen-Hao Chen, Chiayi County (TW); and Kung-Chu Chen, Chiayi (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and NATIONAL TAIWAN UNIVERSITY, Taipei (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW); and NATIONAL TAIWAN UNIVERSITY, Taipei (TW)
Filed on Apr. 23, 2022, as Appl. No. 17/727,737.
Prior Publication US 2023/0343859 A1, Oct. 26, 2023
Int. Cl. H10D 48/38 (2025.01); H10D 48/00 (2025.01); H10D 48/32 (2025.01)
CPC H10D 48/366 (2025.01) [H10D 48/383 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a sensing device comprising:
a dielectric layer over the substrate;
a sensing pad over and in contact with the dielectric layer; and
a first sensing electrode and a second sensing electrode over and physically in contact with the dielectric layer, wherein the first sensing electrode and the second sensing electrode surround the sensing pad, and a distance between the first sensing electrode and the second sensing electrode is greater than a distance between the sensing pad and the first sensing electrode, and the dielectric layer has a first U-shaped cross-sectional profile wrapping around the first sensing electrode, a second U-shaped cross-sectional profile wrapping around the second sensing electrode, and a linear cross-sectional profile continuously extends from the first U-shaped cross-sectional profile to the second U-shaped cross-sectional profile; and
a transistor over the substrate, wherein a gate of the transistor is connected to the sensing pad.