| CPC H10D 30/6755 (2025.01) [H10D 30/6745 (2025.01)] | 13 Claims |
|
1. A semiconductor device comprising:
a conductive line that extends in a first direction on a substrate;
a first oxide semiconductor layer, which includes a first crystalline oxide semiconductor material containing a first metal element, on the conductive line;
a second oxide semiconductor layer, which is in physical contact with the first oxide semiconductor layer and is connected to the conductive line, on the conductive line;
a gate electrode that extends in a second direction, which crosses the first direction, on a side of the second oxide semiconductor layer; and
a capacitor structure that is connected to the second oxide semiconductor layer and is on the second oxide semiconductor layer and the gate electrode,
wherein the second oxide semiconductor layer includes a second crystalline oxide semiconductor material containing the first metal element and second and third metal elements, which are different from the first metal element.
|