US 12,426,311 B1
Gate structures and spacers in semiconductor devices and methods of manufacturing thereof
Shih-Yao Lin, New Taipei (TW); Kuei-Yu Kao, Hsinchu (TW); Chen-Ping Chen, Yilan County (TW); Chih-Chung Chiu, Hsinchu (TW); Chih-Han Lin, Hsinchu (TW); Ming-Ching Chang, Hsinchu (TW); and Chao-Cheng Chen, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Jun. 4, 2024, as Appl. No. 18/733,564.
Application 18/733,564 is a division of application No. 17/371,907, filed on Jul. 9, 2021, granted, now 12,034,056.
Int. Cl. H10D 30/00 (2025.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H10D 30/6735 (2025.01) [H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01); H10D 62/151 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, comprising:
forming a fin structure extending along a first lateral direction;
forming a dummy gate structure over a portion of the fin structure, wherein the dummy gate structure extends along a second direction perpendicular to the first lateral direction;
growing source/drain structures that are respectively coupled to ends of the portion of the fin structure;
removing the dummy gate structure to form a gate trench;
lining inner sidewalls of the gate trench with a gate spacer;
etching the gate spacer to expose the fin structure; and
forming an active gate structure over the etched gate spacer in the gate trench.