| CPC H10D 1/042 (2025.01) [H01L 23/5223 (2013.01); H10D 1/692 (2025.01); H10D 1/716 (2025.01)] | 11 Claims |

|
1. A method, comprising:
forming a tub opening in a dielectric region;
depositing a first conformal metal extending into the tub opening;
depositing a first insulator layer extending into an opening defined by the first conformal metal;
depositing a second conformal metal extending into an opening defined by the first insulator layer;
depositing a second insulator layer extending into an opening defined by the second conformal metal;
depositing a third electrode metal extending into an opening defined by the second insulator layer; and
performing a planarization process defining a nested metal-insulator-metal (MIM) structure in the tub opening;
wherein after the planarization process:
a remaining portion of the first insulator layer defines a first insulator;
a remaining portion of the second conformal metal defines a second electrode;
a remaining portion of the second insulator layer defines a second insulator; and
a remaining portion of the third electrode metal defines a third electrode;
wherein the first electrode, the second electrode, and the first insulator define a first capacitor; and
wherein the second electrode, the third electrode, and the second insulator define a second capacitor electrically connected in series with the first capacitor;
forming a first electrode connection element electrically connected to the first electrode; and
forming a third electrode connection element electrically connected to the third electrode;
wherein the third electrode connection element is electrically insulated from the first electrode connection element.
|