US 12,426,271 B2
Semiconductor memory device
Kyunghwan Lee, Seoul (KR); Yongseok Kim, Suwon-si (KR); Hyuncheol Kim, Seoul (KR); Jongman Park, Hwaseong-si (KR); and Dongsoo Woo, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Feb. 1, 2022, as Appl. No. 17/590,087.
Claims priority of application No. 10-2021-0096001 (KR), filed on Jul. 21, 2021.
Prior Publication US 2023/0024307 A1, Jan. 26, 2023
Int. Cl. H10B 12/00 (2023.01); H10B 53/30 (2023.01)
CPC H10B 53/30 (2023.02) 20 Claims
OG exemplary drawing
 
1. A semiconductor memory device comprising:
a substrate;
a transistor disposed above the substrate, the transistor having a channel region defining an inner space; and
a capacitor passing through the transistor in a vertical direction in the inner space.