US 12,426,237 B2
Semiconductor structure and method for forming same
Youming Liu, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jan. 18, 2023, as Appl. No. 18/156,322.
Application 18/156,322 is a continuation of application No. PCT/CN2022/105101, filed on Jul. 12, 2022.
Claims priority of application No. 202210726374 (CN), filed on Jun. 23, 2022.
Prior Publication US 2023/0422469 A1, Dec. 28, 2023
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/053 (2023.02) [H10B 12/20 (2023.02); H10B 12/482 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor structure, comprising:
providing a substrate, wherein the substrate comprises double heterostructures arrayed along a first direction and a second direction; each of the double heterostructures comprises a first semiconductor layer, a second semiconductor layer and another first semiconductor layer sequentially arranged along the first direction; a forbidden band gap of the first semiconductor layer is different from a forbidden band gap of the second semiconductor layer; the first direction is perpendicular to the second direction, and both the first direction and the second direction are parallel to a plane where the substrate is located; and
forming a double gate structure on sidewalls of each of the double heterostructures along the first direction;
wherein the substrate further comprises a source layer, the source layer forms a source of the semiconductor structure; the double heterostructures are formed on a surface of the source layer in the Z-axis direction, the double heterostructures share one source; and the double heterostructures are formed by:
forming initial double heterostructures arranged at intervals along the first direction on the surface of the source layer; and
etching the initial double heterostructures by a self-aligned double patterning technique or a self-aligned quadruple patterning technique, to form the double heterostructures arrayed along the first direction and the second direction.