US 12,426,236 B2
Semiconductor structure, method for manufacturing same and memory
Guangsu Shao, Hefei (CN); and Deyuan Xiao, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Anhui (CN)
Filed on Sep. 28, 2022, as Appl. No. 17/954,467.
Claims priority of application No. 202210869849.7 (CN), filed on Jul. 21, 2022.
Prior Publication US 2023/0014259 A1, Jan. 19, 2023
Int. Cl. H10B 12/00 (2023.01); G11C 5/06 (2006.01)
CPC H10B 12/05 (2023.02) [G11C 5/063 (2013.01); H10B 12/33 (2023.02); H10B 12/482 (2023.02)] 6 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor structure, comprising:
providing a semiconductor substrate;
forming a first trench in the semiconductor substrate;
forming a metal layer in the first trench by electroplating; and
performing a thermal treatment to allow the metal layer to react with the semiconductor substrate surrounding and in contact with the metal layer, so as to form a metal compound layer, wherein the metal compound layer at least is used as conductor lines;
wherein the formation of the first trench comprises:
forming a plurality of first trenches arranged at intervals along a first direction in the semiconductor substrate;
the formation of the metal layer comprises:
forming a first seed layer in the first trench; and
forming a first metal layer on the first seed layer by electroplating; wherein the first seed layer together with the first metal layer constitutes the metal layer;
the formation of the metal compound layer comprises:
performing a thermal treatment such that the semiconductor substrate surrounding the first seed layer and the first metal layer is completely reacted into a first metal compound layer; wherein the first metal compound layer extends in a second direction, and is used as a bit line; the first direction and the second direction are intersected with each other and perpendicular to a direction of a thickness of the semiconductor substrate;
wherein the formation of the plurality of first trenches arranged at intervals along the first direction in the semiconductor substrate comprises:
forming a plurality of second trenches arranged at intervals along the first direction in the semiconductor substrate; and
filling the second trenches with an insulating material partially to form the first trenches.