US 12,425,018 B2
Apparatus and method for ultra-fast crystallization in phase-change RF switches
Shahar Kvatinsky, Haifa (IL); Nicolas Wainstein, Haifa (IL); and Eilam Yalon, Haifa (IL)
Assigned to Technion Research & Development Foundation Limited, Haifa (IL)
Appl. No. 18/276,267
Filed by Technion Research & Development Foundation Limited, Haifa (IL)
PCT Filed Feb. 15, 2022, PCT No. PCT/IL2022/050180
§ 371(c)(1), (2) Date Aug. 8, 2023,
PCT Pub. No. WO2022/172277, PCT Pub. Date Aug. 18, 2022.
Claims priority of provisional application 63/149,418, filed on Feb. 15, 2021.
Prior Publication US 2024/0313766 A1, Sep. 19, 2024
Int. Cl. H10N 70/20 (2023.01); H03K 3/01 (2006.01); H03K 17/51 (2006.01)
CPC H03K 17/51 (2013.01) [H03K 3/01 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An indirectly heated phase change switch (IPCS) for radio frequency (RF) switching, the IPCS comprising:
first and second RF ports, said ports defining an RF path therebetween;
a phase change material (PCM) located between first and second RF ports;
an embedded heater separated from said PCM by a dielectric layer, the embedded heater configured to provide thermal actuation of said PCM to bring about phase changes between a crystalline state and an amorphous state to provide Ohmic switching between a first resistance level in said crystalline state and a second resistance level in said amorphous state; and
connections for a bias voltage on said IPCS across said RF path.