US 12,425,015 B2
Semiconductor device including IGBT and MOSFET
Taketo Nishiyama, Tokyo (JP); and Hiroki Hidaka, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
Filed on Feb. 9, 2023, as Appl. No. 18/166,984.
Claims priority of application No. 2022-073303 (JP), filed on Apr. 27, 2022.
Prior Publication US 2023/0353138 A1, Nov. 2, 2023
Int. Cl. H03K 17/082 (2006.01)
CPC H03K 17/0828 (2013.01) 6 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a plurality of IGBTs connected in series on a power source line in which bus current is configured to flow;
a MOSFET connected to the plurality of IGBTs in series;
a current sensor that is configured to detect a sense current and provided in a semiconductor chip constituting the MOSFET; and
a real time control circuit configured to receive an output of the current sensor and control a gate voltage of one of the IGBTs based on the sense current detected in the current sensor by reducing the gate voltage to a voltage between a maximum and a minimum of the gate voltage when a collector current of the IGBTs exceeds a threshold, wherein
the bus current is configured to flow via a drain terminal and a source terminal of the MOSFET.