| CPC H03H 9/132 (2013.01) [H03H 9/02062 (2013.01); H03H 9/02086 (2013.01); H03H 9/173 (2013.01); H03H 9/175 (2013.01); H03H 9/54 (2013.01); H10N 30/87 (2023.02); H10N 30/883 (2023.02)] | 20 Claims |

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1. A bulk acoustic wave (BAW) resonator comprising:
a bottom electrode;
a piezoelectric layer over the bottom electrode;
a top electrode over the piezoelectric layer, the top electrode defining a central region and a border (BO) region that extends about a periphery of the central region, the BO region comprising an outer BO region and an inner BO region that is between the outer BO region and the central region; and
a dielectric spacer layer arranged between the top electrode and the piezoelectric layer at the BO region, the dielectric spacer layer being in contact with the piezoelectric layer under the outer BO region and the inner BO region.
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