US 12,424,995 B2
Method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layer
Isabelle Bertrand, Bernin (FR); Alexis Drouin, La Buissiere (FR); Isabelle Huyet, Crolles (FR); Eric Butaud, Grenoble (FR); and Morgane Logiou, Crolles (FR)
Assigned to SOITEC, Bernin (FR)
Appl. No. 17/597,581
Filed by Soitec, Bernin (FR)
PCT Filed Mar. 26, 2020, PCT No. PCT/EP2020/058462
§ 371(c)(1), (2) Date Jan. 12, 2022,
PCT Pub. No. WO2021/008742, PCT Pub. Date Jan. 21, 2021.
Claims priority of application No. 1907859 (FR), filed on Jul. 12, 2019.
Prior Publication US 2022/0247374 A1, Aug. 4, 2022
Int. Cl. H03H 9/02 (2006.01); H03H 3/08 (2006.01)
CPC H03H 3/08 (2013.01) [H03H 9/02559 (2013.01); H03H 9/02929 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for manufacturing a structure comprising a thin layer composed of a piezoelectric and/or ferroelectric material and transferred onto a support provided with a charge trapping layer, the method comprising the following steps:
preparing the support comprising forming the charge trapping layer on a base substrate, the charge trapping layer having a hydrogen concentration of less than 10 18 at/cm 3;
joining the support to a donor substrate by way of a dielectric layer comprising a silicon oxide having nitrogen in a nitrogen/oxygen ratio of between 0.01 and 0.25; and
removing part of the donor substrate to form the thin layer; and
the manufacturing method exposing the structure to a temperature below a maximum temperature of 1000° C. at least during and after the joining step.