| CPC H02M 1/0009 (2021.05) [H02M 1/08 (2013.01); H02M 3/156 (2013.01)] | 7 Claims |
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1. A circuit comprising:
a power transistor having a power transistor control node that controls whether current flows from a power transistor input node to a power transistor output node;
a sense transistor having a sense transistor control node that controls whether current flows from a sense transistor input node to a sense transistor output node, the sense transistor control node connected to the power transistor control node, and the sense transistor input node connected to the power transistor input node, wherein each of the power transistor and sense transistor are manufactured on a semiconductor substrate and each encompass a corresponding part of an epitaxial stack built on the semiconductor substrate, the semiconductor substrate being a first semiconductor substrate, the current sense circuit being manufactured on a second semiconductor substrate that is different than the first semiconductor substrate, the first semiconductor substrate and the second semiconductor substrate packaged in a package that does not have a high voltage rail terminal;
a control drive terminal connected to the power transistor control node and the sense transistor control node; and
a current sense circuit connected to the sense transistor control node and configured to detect current passing through the sense transistor, the current sense circuit also connected to the control drive terminal and configured to draw power from the control drive terminal when a high control signal is present on the control drive terminal.
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