US 12,424,847 B2
Electrostatic protection circuit, memory device, memory system, and electrostatic protection method
Zhiguo Li, Wuhan (CN)
Assigned to YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed by YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan (CN)
Filed on Jul. 7, 2023, as Appl. No. 18/219,631.
Claims priority of application No. 202310339443.2 (CN), filed on Mar. 28, 2023.
Prior Publication US 2024/0332959 A1, Oct. 3, 2024
Int. Cl. H02H 9/04 (2006.01); G11C 7/24 (2006.01); G11C 16/04 (2006.01); G11C 16/30 (2006.01)
CPC H02H 9/046 (2013.01) [G11C 7/24 (2013.01); G11C 16/0483 (2013.01); G11C 16/30 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A circuit for electrostatic protection, comprising:
a turning-on circuit comprising a first resistor and a first capacitor, wherein the turning-on circuit is coupled to an electrostatic terminal and configured to generate a first control signal based on an electrostatic signal generated by the electrostatic terminal;
a turning-off circuit comprising a second resistor and a second capacitor, wherein the turning-off circuit is coupled to the turning-on circuit and configured to generate a second control signal based on the first control signal; and
a discharge transistor comprising a control terminal, a first terminal, and a second terminal,
wherein the control terminal of the discharge transistor is coupled to both the turning-on circuit and the turning-off circuit, the first terminal of the discharge transistor is coupled to a low voltage terminal, and a second terminal of the discharge transistor is coupled to the electrostatic terminal, and
wherein the discharge transistor is configured to:
receive the first control signal at a first time;
receive the second control signal at a second time; and
perform electrostatic discharging between the first time and the second time.