US 12,424,824 B2
Vertical-cavity surface-emitting semiconductor laser diode with the mode filter
Van-Truoung Dai, Vinhphuc Province (VN); Yu-Chung Chin, Taoyuan (TW); Chao-Hsing Huang, Taoyuan (TW); and Van-Chien Nguyen, Hai phong (VN)
Assigned to VISUAL PHOTONICS EXPITAXY CO., LTD, Taoyuan (TW)
Filed by VISUAL PHOTONICS EPITAXY CO., LTD., Taoyuan (TW)
Filed on Oct. 13, 2022, as Appl. No. 17/965,462.
Claims priority of application No. 110137973 (TW), filed on Oct. 13, 2021; application No. 110140913 (TW), filed on Nov. 3, 2021; application No. 111109754 (TW), filed on Mar. 17, 2022; and application No. 111116440 (TW), filed on Apr. 29, 2022.
Prior Publication US 2023/0116144 A1, Apr. 13, 2023
Int. Cl. H01S 5/183 (2006.01); H01S 5/042 (2006.01); H01S 5/065 (2006.01)
CPC H01S 5/18394 (2013.01) [H01S 5/04256 (2019.08); H01S 5/0653 (2013.01); H01S 5/18311 (2013.01); H01S 5/1833 (2013.01); H01S 5/18341 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A vertical-cavity surface-emitting semiconductor laser diode, comprising:
a substrate; and
an epitaxial stack structure disposed on the substrate, and comprising:
an active region;
an upper DBR layer disposed above the active region;
a current confinement layer disposed below the upper DBR layer and comprising a current confinement aperture; and
a mode filter layer disposed above the upper DBR layer and the current confinement layer,
wherein the mode filter layer further comprises an optical aperture, the mode filter layer and the current confinement layer are able to be oxidized laterally, the optical aperture is formed of unoxidized material after the mode filter layer is oxidized laterally, and the current confinement aperture is formed after the current confinement layer is oxidized laterally such that in a cross section, outermost left sidewalls of the upper DBR layer, the mode filter layer, and the current confinement layer are coplanar, and outermost right sidewalls of the upper DBR layer, the mode filter layer, and the current confinement layer are coplanar;
wherein the optical aperture of the mode filter layer is not configured to confine the current.