US 12,424,718 B2
Attenuator including nonuniform resistors and apparatus including the same
Taewan Kim, Yongin-si (KR); Byung-wook Min, Seoul (KR); Hyungyu Kim, Suwon-si (KR); Bosung Suh, Seoul (KR); Kiryong Song, Hwaseong-si (KR); Jounghyun Yim, Hwaseong-si (KR); Michael Choi, Seoul (KR); and Youngjoo Lee, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR); and INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY, Seoul (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 21, 2022, as Appl. No. 17/870,119.
Claims priority of application No. 10-2021-0096708 (KR), filed on Jul. 22, 2021.
Prior Publication US 2023/0026959 A1, Jan. 26, 2023
Int. Cl. H01P 1/22 (2006.01); H01Q 3/34 (2006.01)
CPC H01P 1/22 (2013.01) [H01Q 3/34 (2013.01)] 17 Claims
OG exemplary drawing
 
3. An attenuator comprising:
a first transmission line connected between a first terminal and a first node;
a second transmission line connected between the first node and a second terminal;
a first resistor connected between the first terminal and a ground node;
a second resistor connected between the second terminal and the ground node; and
a third resistor connected between the first node and the ground node,
wherein the first and second resistors each have a resistance that is higher than a resistance of the third resistor, and
wherein each of the first to third resistors is a varistor.