| CPC H01L 25/18 (2013.01) [H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 24/81 (2013.01); H01L 25/50 (2013.01); H05K 1/181 (2013.01); H05K 1/182 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/17155 (2013.01); H01L 2224/17505 (2013.01); H01L 2224/81815 (2013.01); H05K 2201/09072 (2013.01); H05K 2201/1053 (2013.01); H05K 2201/10537 (2013.01)] | 19 Claims |

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1. A method of fabricating a processor system, the processor system comprising: a processor chip; a printed circuit board, the printed circuit board having a through-hole with a perimeter that has dimensions that are larger than corresponding dimensions of a perimeter of the processor chip; and an input/output (I/O) chip, the I/O chip having a perimeter that has dimensions that are larger than corresponding dimensions of the through-hole of the printed circuit board, the method comprising:
forming a plurality of contacts on, at, or recessed in a first surface of the processor chip that extend along a perimeter of the processor chip;
forming a plurality of contacts distributed on, at, or recessed in a first surface of the printed circuit board that extend along the perimeter of the through-hole;
forming a first plurality of contacts distributed on, at, or recessed in a first surface around a perimeter of the I/O chip, and a second plurality of contacts distributed on, at, or recessed in the first surface along an inside of the perimeter of the I/O chip;
aligning the processor chip at least partially received inside the through-hole of the printed circuit board;
at least partially covering the first surface of the I/O chip with at least a portion of the first surface of the processor chip and with a least a portion of the first surface of the printed circuit board;
mating the first plurality of contacts on the I/O chip with the plurality of contacts on the printed circuit board and the second plurality of contacts on the I/O chip with the plurality of contacts on the processor chip; and
forming an I/O shield layer below the first and the second plurality of contacts on the I/O chip, the I/O shield layer comprising a material with high critical temperature relative to a material comprising the processor chip, the I/O shield layer including a number of superconducting vias that provide a communicative path to the first and the second plurality of contacts.
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