US 12,424,587 B2
Semiconductor device having underfill surrounding bottom package and solder ball
Jing-Cheng Lin, Hsinchu (TW); Ying-Ching Shih, Hsinchu (TW); Pu Wang, Hsinchu (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on Nov. 23, 2023, as Appl. No. 18/518,445.
Application 18/518,445 is a continuation of application No. 17/215,493, filed on Mar. 29, 2021, granted, now 11,854,877.
Application 17/215,493 is a continuation of application No. 16/742,285, filed on Jan. 14, 2020, granted, now 10,964,673, issued on Mar. 30, 2021.
Application 16/742,285 is a continuation of application No. 16/410,753, filed on May 13, 2019, granted, now 10,535,639, issued on Jan. 14, 2020.
Application 16/410,753 is a continuation of application No. 15/457,299, filed on Mar. 13, 2017, granted, now 10,290,609, issued on May 14, 2019.
Claims priority of provisional application 62/407,744, filed on Oct. 13, 2016.
Prior Publication US 2024/0087954 A1, Mar. 14, 2024
Int. Cl. H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 21/768 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/10 (2006.01)
CPC H01L 24/97 (2013.01) [H01L 21/561 (2013.01); H01L 21/563 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 23/3121 (2013.01); H01L 23/3135 (2013.01); H01L 23/3142 (2013.01); H01L 23/3157 (2013.01); H01L 23/481 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/50 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 24/17 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 2221/68359 (2013.01); H01L 2224/16113 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48106 (2013.01); H01L 2224/48229 (2013.01); H01L 2224/73267 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/92244 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/0652 (2013.01); H01L 2225/06548 (2013.01); H01L 2225/06568 (2013.01); H01L 2225/06572 (2013.01); H01L 2225/06586 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/18162 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a bottom package, including:
a molding compound;
a through via, penetrating through the molding compound; and
a die, adjacent to the through via and molded in the molding compound;
a solder ball, disposed over the molding compound and having a bottom surface connecting a top surface of a first end of the through via, wherein a dimension of the bottom surface of the solder ball is equal to a dimension of the top surface of the through via; and
an underfill, surrounding the bottom package and the solder ball, wherein the underfill directly contacts the first end of the through via protruding from a top surface of the molding compound.