US 12,424,586 B2
Bridging-resistant microbump structures and methods of forming the same
Han-Hsiang Huang, Hsinchu (TW); Yen-Hao Chen, Taichung (TW); Chien-Sheng Chen, Hsinchu (TW); and Shin-Puu Jeng, Po-Shan Village (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Jun. 10, 2022, as Appl. No. 17/837,181.
Prior Publication US 2023/0411345 A1, Dec. 21, 2023
Int. Cl. H01L 23/00 (2006.01)
CPC H01L 24/81 (2013.01) [H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/97 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05566 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/13584 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/95001 (2013.01); H01L 2224/97 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/3841 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A bonded assembly comprising a first structure and a second structure that are bonded to each other, wherein:
the first structure comprises first metallic connection structures surrounded by first dielectric layers, the first dielectric layers comprising a passivation dielectric layer that includes openings therein, and further comprises first metallic bump structures electrically connected to the first metallic connection structures, comprising a respective nickel plate portion having a peripheral region that is covered by, and is directly contacted by, the passivation dielectric layer and having a center region that underlies a respective one of the openings in the passivation dielectric layer, and having a respective first horizontal bonding surface segment that is vertically recessed from a first horizontal plane including a distal horizontal surface of the passivation dielectric layer;
the second structure comprises second metallic connection structures surrounded by second dielectric layers, and second metallic bump structures electrically connected to the second metallic connection structures and having a respective second horizontal bonding surface segment that protrudes toward the first structure from a second horizontal plane including a distal horizontal surface of one of the second dielectric layers, the one of the second dielectric layers being most proximal to the first structure among the second dielectric layers; and
the first metallic bump structures are bonded to the second metallic bump structures through solder material portions.