| CPC H01L 23/552 (2013.01) [G11C 5/063 (2013.01); H01L 23/5283 (2013.01); H10B 12/482 (2023.02); H10B 12/488 (2023.02)] | 20 Claims |
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1. A semiconductor device, comprising:
a substrate having a surface;
first and second conductive elements disposed in the substrate, wherein a top surface of each of the first and second conductive element is exposed from the surface of the substrate;
a first signal line disposed on the surface of the substrate and on the top surface of the first conductive element, wherein the first signal line is electrically connected with the first conductive element, wherein a width of the first signal line is greater than a width of the first conductive element, such that the first signal line is in direct contact with the surface of the substrate and the top surface of the first conductive element;
a second signal line disposed on the surface of the substrate, on the top surface of the second conductive element, and spaced apart from the first signal line, wherein the second signal line is electrically connected with the second conductive element, wherein a width of the second signal line is greater than a width of the second conductive element, such that the second signal line is in direct contact with the surface of the substrate and the top surface of the second conductive element; and
a first shielding line between the first signal line and the second signal line, wherein the first shielding line is not interconnect with any one of the first and second conductive elements;
wherein the minimum distance between the first signal line and the second signal line is equal to or less than 90 nanometers (nm).
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