US 12,424,556 B2
Semiconductor device with adjustment layers and method for fabricating the same
Tse-Yao Huang, Taipei (TW)
Assigned to NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed by NANYA TECHNOLOGY CORPORATION, New Taipei (TW)
Filed on Mar. 6, 2024, as Appl. No. 18/596,978.
Application 18/596,978 is a division of application No. 17/698,564, filed on Mar. 18, 2022.
Application 17/698,564 is a division of application No. 16/895,620, filed on Jun. 8, 2020, abandoned.
Prior Publication US 2024/0213162 A1, Jun. 27, 2024
Int. Cl. H01L 21/768 (2006.01); H01L 23/532 (2006.01); H10B 12/00 (2023.01)
CPC H01L 23/53295 (2013.01) [H01L 21/7682 (2013.01); H01L 21/76831 (2013.01); H01L 21/76844 (2013.01); H01L 21/76846 (2013.01); H10B 12/0335 (2023.02); H10B 12/315 (2023.02); H01L 21/76843 (2013.01)] 9 Claims
OG exemplary drawing
 
1. A method for fabricating a semiconductor device, comprising:
providing a substrate;
forming an interconnection structure on the substrate;
forming a contact opening penetrating the interconnection structure;
conformally forming a contact barrier layer in the contact opening, wherein the contact barrier layer has two side segments and a bottom segment;
conformally forming an adjustment layer that covers an upper portion of the contact barrier layer, such that the bottom segment of the contact barrier layer is free from the adjustment layer, wherein a thickness of the adjustment layer is gradually reduced from top to bottom; and
forming a contact in the contact opening, such that the adjustment layer is formed at an upper portion of a sidewall of the contact.