US 12,424,548 B2
Metallization layer and fabrication method
I-Che Lee, Hsinchu (TW); Huai-Ying Huang, Jhonghe (TW); and Ruei-Cheng Shiu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Apr. 30, 2024, as Appl. No. 18/650,157.
Application 18/650,157 is a division of application No. 17/308,404, filed on May 5, 2021, granted, now 12,002,755.
Claims priority of provisional application 63/142,574, filed on Jan. 28, 2021.
Prior Publication US 2024/0282707 A1, Aug. 22, 2024
Int. Cl. H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 25/18 (2023.01)
CPC H01L 23/5283 (2013.01) [H01L 21/76807 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/76883 (2013.01); H01L 21/76888 (2013.01); H01L 23/5226 (2013.01); H01L 23/53228 (2013.01); H01L 23/53238 (2013.01); H01L 25/18 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a substrate;
a first metal structure over the substrate; and
a second metal structure directly over and in contact with the first metal structure;
wherein the second metal structure has a smaller horizontal cross-section than the first metal structure;
the second metal structure comprises a metal material of the first metal structure and has a higher oxygen concentration than the first metal structure; and
a memory cell, wherein the memory cell comprises a top electrode having an upper surface coplanar with an upper surface of the second metal structure.