US 12,424,538 B2
Semiconductor device including dummy deep trench capacitors and a method of manufacturing thereof
Fu-Chiang Kuo, Hsinchu (TW); Yu-Hsin Fang, Hsinchu (TW); and Min-Hsiung Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu (TW)
Filed on Aug. 1, 2022, as Appl. No. 17/878,197.
Prior Publication US 2024/0038654 A1, Feb. 1, 2024
Int. Cl. H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01); H01L 23/532 (2006.01)
CPC H01L 23/5223 (2013.01) [H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10D 1/042 (2025.01); H10D 1/716 (2025.01); H01L 23/53295 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
at least one active deep trench capacitor (DTC) including a plurality of conductive layers and an insulating layer disposed between adjacent conductive layers of the plurality of conductive layers;
a plurality of dummy DTCs disposed on opposing sides of the at least one active DTC; and
a plurality of conductive structures connected to the plurality of conductive layers of the active DTC, the plurality of dummy DTCs insulated from the at least one active DTC.