US 12,424,519 B2
Semiconductor structure, method for manufacturing semiconductor structure, and memory
Shuangshuang Wu, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jun. 28, 2022, as Appl. No. 17/809,502.
Application 17/809,502 is a continuation of application No. PCT/CN2021/124955, filed on Oct. 20, 2021.
Claims priority of application No. 202110996032 (CN), filed on Aug. 27, 2021.
Prior Publication US 2023/0060502 A1, Mar. 2, 2023
Int. Cl. H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01)
CPC H01L 23/481 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76829 (2013.01); H01L 21/7684 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H01L 21/76898 (2013.01); H01L 23/535 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for manufacturing a semiconductor structure, comprising:
providing a base comprising a substrate, a first isolation layer, a first dielectric layer, and a stop layer that are formed in a stack manner;
forming in the base a first contact hole extending from the stop layer into the substrate, wherein a rim of the first contact hole is flush with an upper surface of the stop layer;
forming sequentially on an inner wall of the first contact hole a first insulating layer, a first barrier layer and a first contact structure filling the first contact hole, wherein an upper surface of the first contact structure is exposed;
forming a protective layer covering the upper surface of the first contact structure;
forming a second dielectric layer and a second isolation layer on the protective layer in a stack manner;
forming a second contact hole penetrating through the second dielectric layer, the second isolation layer, and the protective layer, stopping at the first contact structure, and exposing the upper surface of the first contact structure; and
forming on an inner wall of the second contact hole a second barrier layer and a second contact structure filing the second contact hole;
wherein the forming sequentially on an inner wall of the first contact hole a first insulating layer, a first barrier layer and a first contact structure filling the first contact hole comprises:
forming the first insulating layer covering the upper surface of the stop layer and the inner wall of the first contact hole;
forming the first barrier layer covering an upper surface of the first insulating layer;
depositing a semiconductor material on a surface of the first barrier layer, to form the first contact structure covering the first barrier layer and filling the first contact hole; and
removing the first insulating layer, the first barrier layer, and the first contact structure on the upper surface of the stop layer, to make the upper surface of the first contact structure in the first contact hole flush with the upper surface of the stop layer;
wherein the forming a protective layer covering the upper surface of the first contact structure comprises:
forming the protective layer covering the upper surface of the first contact structure and a surface of the stop layer by a deposition process.