| CPC H01L 23/3735 (2013.01) [H01L 23/3128 (2013.01); H01L 23/3675 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/49838 (2013.01); H01L 24/16 (2013.01); H01L 24/73 (2013.01); H01L 25/0655 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16238 (2013.01); H01L 2224/73204 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/182 (2013.01)] | 20 Claims |

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1. A method of forming a semiconductor structure, the method comprising:
attaching a first die, a second die, and a third die to a first side of an interposer, wherein the second die and the third die are on opposing sides of the first die;
forming a molding material on the interposer, wherein the molding material surrounds the first die, the second die, and the third die;
forming a first thermal interface material (TIM) film, a second TIM film, and a third TIM film on the first die, the second die, and the third die, respectively, wherein the first TIM film, the second TIM film, and the third TIM film are spaced apart from each other, wherein forming the first TIM film comprises placing a first pre-formed TIM sheet on an upper surface of the first die, wherein forming the second TIM film and the third TIM film comprises depositing a gel-type TIM material on the second die and the third die, wherein the first pre-formed TIM sheet and the gel-type TIM material are different materials;
bonding a second side of the interposer to a first surface of a substrate; and
attaching a heat-dissipation lid to the first surface of the substrate to form an enclosed space between the heat-dissipation lid and the substrate, wherein the first die, the second die, the third die, the first TIM film, the second TIM film, and the third TIM film are disposed in the enclosed space, wherein the first TIM film, the second TIM film, and the third TIM film contact the heat-dissipation lid.
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