| CPC H01L 23/3675 (2013.01) [H01L 24/32 (2013.01); H01L 25/072 (2013.01); H01L 2224/32245 (2013.01); H01L 2924/1011 (2013.01); H01L 2924/1611 (2013.01); H01L 2924/16196 (2013.01); H01L 2924/16251 (2013.01); H01L 2924/1815 (2013.01); H01L 2924/182 (2013.01); H01L 2924/186 (2013.01)] | 8 Claims |
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1. A power module comprising:
a first power semiconductor element and a second power semiconductor element;
a first conductor plate to which the first power semiconductor element is bonded;
a second conductor plate to which the second power semiconductor element is bonded, the second conductor plate being disposed adjacent to the first conductor plate;
a first heat-dissipating member disposed counter to the first conductor plate and the second conductor plate; and
a first insulating sheet member disposed between the first heat-dissipating member and the first conductor plate,
wherein in a cross-section passing through a center of the first power semiconductor element and a center of the second power semiconductor element and perpendicular to a bonding surface between the first conductor plate and the first power semiconductor element, the first power semiconductor element is disposed at a position at which a first length from an end of the first conductor plate, the end being closer to the second conductor plate, to the first power semiconductor element is larger than a second length from an end of the first conductor plate, the end being far from the second conductor plate, to the first power semiconductor element, and the second length is larger than a thickness of the first conductor plate, and
wherein:
at least two power semiconductor elements of the first power semiconductor element and a third power semiconductor element are bonded to the first conductor plate, and the third power semiconductor element is bonded to a side of the first conductor plate, the side being farther from the second conductor plate than the first power semiconductor element is,
at least two power semiconductor elements of the second power semiconductor element and a fourth power semiconductor element are bonded to the second conductor plate, and the fourth power semiconductor element is bonded to a side of the second conductor plate, the side being farther from the first conductor plate than the second power semiconductor element is, and
in a cross-section passing through the center of the first power semiconductor element and the center of the second power semiconductor element and perpendicular to the bonding surface between the first conductor plate and the first power semiconductor element, the first power semiconductor element and the third power semiconductor element are disposed at a position at which the first length is larger than a third length from the end of the first conductor plate, the end being far from the second conductor plate, to the third power semiconductor element, and the third length is larger than the thickness of the first conductor plate.
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