US 12,424,497 B2
Method for transferring a layer from a source substrate to a destination substrate
Julie Widiez, Grenoble (FR); and Frank Fournel, Grenoble (FR)
Assigned to Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
Appl. No. 18/865,498
Filed by Commissariat à I'Énergie Atomique et aux Énergies Alternatives, Paris (FR)
PCT Filed May 4, 2023, PCT No. PCT/EP2023/061790
§ 371(c)(1), (2) Date Nov. 13, 2024,
PCT Pub. No. WO2023/222398, PCT Pub. Date Nov. 23, 2023.
Claims priority of application No. 2204713 (FR), filed on May 18, 2022.
Prior Publication US 2025/0112094 A1, Apr. 3, 2025
Int. Cl. H01L 21/00 (2006.01); B32B 37/00 (2006.01); H01L 21/78 (2006.01)
CPC H01L 21/7813 (2013.01) [B32B 37/025 (2013.01); B32B 2457/14 (2013.01)] 11 Claims
OG exemplary drawing
 
1. Method of transferring a layer from a source substrate to a destination substrate, comprising the following steps:
a) arranging a masking disk on a central portion of a bonding surface of said layer and/or of the destination substrate;
b) implementing an ion etching to form a step in front of a peripheral portion, not covered with the masking disk, of the bonding surface of said layer and/or of the destination substrate;
c) removing the masking disk;
d) activating the bonding surface of said layer and the bonding surface of the destination substrate by ion etching or ion deposition of a bonding material; and
e) after step d), placing into contact the bonding surface of said layer with the bonding surface of the destination substrate,
wherein steps b) and d) are successively implemented in a same ion treatment chamber; and
wherein steps d) and e) are implemented under vacuum, with no rupture of vacuum between the two steps.