US 12,424,490 B2
Halogenation-based gapfill method and system
Timothee Blanquart, Oud-Heverlee (BE); René Henricus Jozef Vervuurt, Leuven (BE); and Jihee Jeon, Leuven (BE)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Sep. 27, 2022, as Appl. No. 17/953,502.
Claims priority of provisional application 63/250,326, filed on Sep. 30, 2021.
Prior Publication US 2023/0115806 A1, Apr. 13, 2023
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01)
CPC H01L 21/76837 (2013.01) [H01L 21/02112 (2013.01); H01L 21/0228 (2013.01); H01L 21/76877 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of filling a gap on a surface of a substrate, the method comprising the steps of:
providing a substrate within a first reaction chamber, the substrate comprising the gap;
forming a material layer on a surface of the substrate within the first reaction chamber;
exposing the material layer to a halogen reactant in a second reaction chamber to thereby form a flowable layer comprising a halogen within the gap; and
exposing the flowable layer to a converting reactant in a third reaction chamber to form a converted material within the gap.