| CPC H01L 21/76832 (2013.01) [H01L 21/76802 (2013.01); H01L 21/76898 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 21/76834 (2013.01)] | 20 Claims |
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1. A semiconductor device comprising:
a substrate;
a transistor connected to the substrate; and
a wiring structure comprising contact wirings electrically connected to the transistor,
wherein the wiring structure further comprises a first wiring insulating layer, a first material layer contacting the first wiring insulating layer, a second material layer contacting the first material layer, and a second wiring insulating layer contacting the second material layer,
wherein the first material layer comprises SiN,
wherein the second material layer comprises SiCN,
wherein a dielectric constant of the first wiring insulating layer is greater than a dielectric constant of the second wiring insulating layer, and
wherein an interfacial fracture energy between the first wiring insulating layer and the first material layer is higher than an interfacial fracture energy between the first wiring insulating layer and the second material layer.
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8. A semiconductor device comprising:
a substrate;
an insulating layer on the substrate;
a transistor between the substrate and the insulating layer; and
a wiring structure on the insulating layer,
wherein the wiring structure comprises a first wiring insulating layer, a first material layer contacting the first wiring insulating layer, a second material layer contacting the first material layer, and a second wiring insulating layer contacting the second material layer,
wherein the first material layer comprises SiN,
wherein the second material layer comprises SiCN,
wherein the first and second wiring insulating layers comprise an insulating material comprising carbon and oxygen,
wherein a carbon concentration of the first wiring insulating layer is less than a carbon concentration of the second wiring insulating layer, and
wherein an interfacial fracture energy between the second wiring insulating layer and the second material layer is higher than an interfacial fracture energy between the second wiring insulating layer and the first material layer.
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16. A semiconductor device comprising:
a substrate;
an insulating layer on the substrate;
a transistor between the substrate and the insulating layer; and
a wiring structure on the insulating layer,
wherein the wiring structure comprises a first wiring and a second wiring contacting each other, a first wiring insulating layer at least partially surrounding the first wiring in a plan view of the semiconductor device, a second wiring insulating layer at least partially surrounding the second wiring in the plan view of the semiconductor device, and a multi-capping layer interposed between the first and second wiring insulating layers,
wherein a dielectric constant of the first wiring insulating layer is greater than a dielectric constant of the second wiring insulating layer,
wherein the multi-capping layer comprises a first material layer and a second material layer respectively having different carbon concentrations,
wherein an average of interfacial fracture energies at a plurality of positions between the first wiring insulating layer and the first material layer is higher than an average of interfacial fracture energies at a plurality of positions between the first wiring insulating layer and the second material layer, and
wherein an average of interfacial fracture energies at a plurality of positions between the second wiring insulating layer and the second material layer is higher than an average of interfacial fracture energies at a plurality of positions between the second wiring insulating layer and the first material layer.
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