US 12,424,486 B2
Integrated circuit structure with backside interconnection structure having air gap
Li-Zhen Yu, New Taipei (TW); Huan-Chieh Su, Changhua County (TW); Lin-Yu Huang, Hsinchu (TW); Cheng-Chi Chuang, New Taipei (TW); and Chih-Hao Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Apr. 9, 2024, as Appl. No. 18/630,814.
Application 18/630,814 is a continuation of application No. 18/066,071, filed on Dec. 14, 2022, granted, now 11,984,350.
Application 18/066,071 is a continuation of application No. 17/199,085, filed on Mar. 11, 2021, granted, now 11,551,969, issued on Jan. 10, 2023.
Claims priority of provisional application 63/082,018, filed on Sep. 23, 2020.
Prior Publication US 2024/0258158 A1, Aug. 1, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/768 (2006.01); H10D 30/67 (2025.01)
CPC H01L 21/7682 (2013.01) [H01L 21/76805 (2013.01); H01L 21/76843 (2013.01); H01L 21/76895 (2013.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) structure, comprising:
a transistor having a source/drain structure;
a via electrically connected with the source/drain structure of the transistor;
a conductive feature electrically connected with the via; and
a spacer structure along a sidewall of the conductive feature and comprising:
a first spacer having an L-shape cross-sectional profile;
a second spacer having a bar-shape cross-sectional profile, wherein the second spacer is in contact with the first spacer; and
a seal cap between the first spacer and the second spacer, wherein the first spacer, the second spacer, and the seal cap form an air gap.